文档介绍：Journal of The Electrochemical Society, 158 (12) D715-D718 (2011) D715
0013-4651/2011/158(12)/D715/4/$ © The Electrochemical Society
High-Speed Through Silicon Via(TSV) Filling Using
Diallylamine Additive
II. Optimization of Diallylamine Concentration
Taro Hayashi,a,∗ Kazuo Kondo,a,∗∗,z Takeyasu Saito,a,∗∗ Minoru Takeuchi,b and
Naoki Okamotoa,∗∗
aDepartment of Chemical Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531, Japan
bNitto pany, Limited, Tokyo, 102-0073, Japan
High-speed copper electrodeposition is needed to optimize the TSV process with a high throughput. To inhibit electrodeposition
on the top surface of the TSV, the ODT was microcontact-printed on the top surface. The ODT microcontact-printing effectively
inhibits the copper electrodepositon on the top surface. With ppm , V-shapes were formed in the via cross sections
and these shapes lead to bottom-up via Without microcontact-printing, and with ppm , V-shapes were again
formed in the via cross sections and these shapes lead to bottom-up via filling. We eeded in filling 10 μm diameter and 70 μm
deep vias within 35 minutes without microcontact-printing. This was achieved by optimizing the concentration with CVS
measurements. The inhibition layer of the microcontact-printing does not speed up the TSV electrodeposition. The most important
factor to spe