文档介绍：年 7 机械科学与技术
277 Science and for Aerospace Engineering V0127 No7
121
南京航空航天大学江苏省精密与微细制造技术重点实验室,南京;
锾锵亓⒋笱Щ抵悄芟低彻こ滔担毡厩锾弧髋┮荡笱Чぱг海喜
杨卫平
摘要:针对硅片的传统化学机械抛光,特别是随着硅片直径不断增大,硅片抛光表面质量和抛光
-
理,抛光工具设计,性能及检测进行了详细论述和说明。在上述研究工作基础上,建立了超声椭圆
振动辅助抛光实验系统,并进行了实验研究。实验结果显示,在抛光加工中引入超声椭圆运动后,
工件抛光表面粗糙度值由传统抛光法的/降低到,材料去除率最多可提高
%,且工件表面形貌有明显改善。
关键词:超声椭圆振动;化学机械抛光;抛光工具;实验研究
中图分类号: A1003-8728(2008)07-0841-07
A Technique UltrasonicEllipticVibrationAssisted
Chemical-Mechanical Polishing and its Investigation
⋯, Yongb02XuJiawenl
疛 Key Precision and Micro-Manufacturing ,
Nanjing Aeronautics and AstronauticsNanjing;
2
Machine and Systems 珹 Prefectural UniversityAkita015-0055Japan
3
College 琂 Agricuhural , 330045)
: traditional chemical-mechanical polishing silicon 瑃 surface quality and silicon
wafer polishing not and the a silicon wafer es and
. 琣 newly developed technique ultrasonic-ellipticvibration-assisted·
polishing 甌 polishing 瑃 designperformanceand testing
liptie-vibration-assisted polishing are explained detailBased the above workatesting
sonic-elliptic-vibration-assisted polishing developed and 甌 results
vibration 瑃 value silicon wafer surface roughness
decreases / the traditional methods / polishing(UAP)the
removal rate(MRR)is increased % 琣 the surface greatly im-
.
Key wordsultrasonic vibrationchemicalmechanical籶; investigati