文档介绍：浙江大学硕士学位论文陈旭波:FeS2薄膜的光电性能及光电转换研究
Abstract
Thc FeS2(pyrite)with cubic crystal structure has shown all important research value勰a promising novel solar ceils material due to its suitable energy band gap( eV),hi曲optical absorption coefficient(口E5x105 cm-‘for五夕00 am),excellent patibility and low manufacturing cost.
In the investigation,the polycrystalline FeS2 thin films were prepared by thermal sulfurizing the precursive iron films obtained by ron effects of
film thickness and crystallizing status of precursive iron films on the rnicrostmcture and photoelectrical properties ofFeS2 thin films were FeS2 thin films were used as sensitizers in the system of sensitized nanoerystalline solar sensitizations of Ti02 porous films with FeS2 mill films of different grain sizes were
research results call be drawn鹞follows:
In the process of sulfumtion reaction,film volume expansion,sulfuration reaction perfectibility,rigid restraint level and lattice microstress can change with film thickness and affect the lattice distortion exist fine crystallites in all the sulfurized thicker films sheW a smoother surface and more uniform microstrocture than
the thinner carrier Concentration decreases while the carrier mobility increases with increasing in film thickness until 400 ,the carrier concentration increases while the carrier mobility decreases as film thickness is over
400 exists a maximum electrical conductivity at the film thickness about 130
nin.
Higher substrate temperatures Can result in larger erystallite scale and better crystallinity of the precursive iron reaction at 400 oC induces the change of precursive iron with various crystallizing levels into FeS2 with fine pleteness of film bulk increases with the increase of substrate temperature in depositing the preeursive iron me increase of iron
grain size,th