文档介绍：第 33 卷第 11 期
电子元件与材料

2014 年 11 月
PONENTS AND MATERIALS
Nov. 2014
综
述
CIGS 薄膜太阳能电池结构分析
肖友鹏 1,熊志华 2,周明斌 2
(1. 江西科技学院机械工程学院,江西南昌 330098;2. 江西科技师范大学江西省光电子与通信重点实验室, 江西南昌 330038)
摘要: 阐述了影响铜铟镓硒(CIGS)薄膜太阳能电池性能和效率的技术因素,包括 CIGS 半导体材料的晶体结构、电池的结构组成、衬底材料的选择以及 CIGS 薄膜的 Na 掺杂等。分析了多元共蒸发法、硒化法沉积 CIGS 吸收层以及化学水浴法沉积 CdS 缓冲层的具体工艺和特征,介绍了柔性 CIGS 薄膜太阳能电池的卷对卷技术,最后就 CIGS 薄膜太阳能电池的研发与商业化生产中遇到的挑战及解决方法进行了分析与归纳。
关键词: 铜铟镓硒;太阳能电池;综述;衬底;薄膜;柔性
doi: -
中图分类号: TM615 文献标识码:A 文章编号:1001-2028(2014)11-0018-06
Device structure analysis of CIGS thin film solar cell
XIAO Youpeng1, XIONG Zhihua2, ZHOU Mingbin2
(1. College of Mechanical Engineering, Jiangxi University of Technology, Nanchang 330098, China ; 2. Key Laboratory for Optoelectronics munication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038, China)
Abstract: The technological factors which strongly influence the properties and efficiency of copper indium gallium diselenide (CIGS) thin film solar cell are reviewed, such as the crystal structure of CIGS semiconductor material, the device structure of CIGS thin film solar cell, the choice of substrate material and the Na-doping of CIGS thin film. And the deposition processes and features of co-evaporation, selenization for growth of CIGS absorption layer and chemical bath deposition for growth of CdS buffer layer