文档介绍:P-type oxide semiconductor SnO
Outline
Literature research
Introduction
Experimental method
Experimental properties
Discussion
Literature research 1
P-channel thin-film transistor using p -type oxide semiconductor, SnO
Yoichi Ogo, Hidenori Hiramatsu,Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono
Applied Physics Letters 93, 032113 (2008)
Introduction
Transparent amorphous oxide semiconductors (TAOSs) are easily
fabricated at low temperature and exhibit sufficient performance.
TFTs using TAOs channels offer field-effect mobilities of >
on/off current ratios of ~108.
N-channel TFTs have good performance.
Developing p-channel TFTs are challenging because p-type oxide
semiconductors have low hole mobility.
SnO is a good candidate for a p-type semiconductor due to its Sn 5s
nature at VBM.
SnO has a high hole mobility and can be used to produce good p-type oxide TFTs.
Experimental method
SnO films were grown on (001) YSZ substrates using PLD.
base pressure :
a single-phase SnO ceramic target
annealing in a vacuum
at 200°C for 5 min
Tg : 575°C
PO2 :
growth rate: nm/min
Figure(a). Structure of a top-gate TFT.
Experimental properties
Analysis of figure(b)
Figure(b). Output characteristics.
increases as VDS decreases from 0 to -10V. Negative VGS increases to 16 as VDS decreases down to -10 V.
Discussion
P-channel TFT using SnO has high performance.
High-quality epitaxial films were grown on YSZ (001) single-crystal substrates in high-temoerature process(575°C).
Literature research 2
Sputtering formation of p -type SnO
thin-film transistors on glass toward oxide
complimentary circuits
H. Yabuta, N. Kaji, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano and H. Hosono
Applied Physics Letters 97, 072111 (2010)
Introduction
Oxide semiconductors such as a-IGZO can be formed at
low-temperatures (.,room temperature) and show larger
mobilities (>~10 cm2V-1s-1).
Most of high-mobility oxide semicond