文档介绍：H230 Electrochemical and Solid-State Letters, 13 ͑7͒ H230-H233 ͑2010͒
1099-0062/2010/13͑7͒/H230/4/$ © The Electrochemical Society
Double Self-Coated Benzimidazole–plex Structure
as Gate Insulator for anic Thin Film
Transistors
Sheng-Wei Chen, Chao-Ying Hsieh, Chung-Hwa Wang, and Jenn-Chang Hwangz
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013,
Taiwan
A double-thin-film structure of self-coated benzimidazole–plex ͒ is utilized as the gate insulator for pentacene
organic thin film transistors ͑OTFTs͒. The double thin film posed of a 2-heptyl benzimidazole–plex and
a2-͑naphthalene-2-ylmethyl͒benzimidazole–plex. The fabrication features of the double-thin-film are self-
coating, water-based processing, selectivity of deposition, and short time. The double-thin-film insulator OTFT exhibits
better device performance than the single-thin-film insulator OTFT made with the 2-heptyl benzimidazole–-
plex. The field-effect mobility, on/off current ratio, and subthreshold swing of the double-thin-film insulator OTFT are
determined to be cm2 V−1 s−1, ϫ 104, and V/dec, respectively.
© 2010 The Electrochemical Society. ͓DOI: All rights reserved.
Manuscript submitted February 1, 2010; revised manuscript received March 17, 2010. Published April 22, 2010.
Organic thin film transist