文档介绍：Electrochemical and Solid-State Letters, 13 ͑11͒ H399-H402 ͑2010͒ H399
1099-0062/2010/13͑11͒/H399/4/$ © The Electrochemical Society
Thin Film Ag Masking for Deep Glass Micromachining
Hing Wah Lee,z Daniel C. S. Bien, Siti Aishah Mohamad Badaruddin, and
Aun Shih Teh
Mimos Berhad, MEMS/NEMS Cluster, Technology Park Malaysia, Kuala Lumpur WP 57000, Malaysia
We report a single thin film and low cost masking material for deep, wet isotropic etching of glass in HF, which has applications
in microfluidic devices and systems. With a 100 nm thin silver ͑Ag͒ mask, microcavities with an etch depth exceeding 200 m
were achieved and, by further thickening the silver film to 300 nm, etch depths up to 340 m were observed. The thin film was
deposited by evaporation and patterned in a mixture of nitric acid and deionized water at a ratio of 1:3. Silver had good adhesion
to glass.
© 2010 The Electrochemical Society. ͓DOI: All rights reserved.
Manuscript submitted April 26, 2010; revised manuscript received June 29, 2010. Published September 9, 2010.
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Glass is fast gaining prominence in the development of micro- peroxide H2O2 and sulfuric acid H2SO4 . A thin film of Ag was
electromechanical systems ͑MEMS͒ devices, especially for applica- then evaporated onto the glass wafers by electron-beam evaporation
tions in the area of microfluidics, BioM