文档介绍：material spec
item Purity of Poly crystaline silicon
grade1 grade2 grade3
n type Resistivity,Ω·cm ≥300 ≥200 ≥100
p type Resistivity,Ω·cm ≥3000 ≥2000 ≥1000
carton,at/cm³ ≤×10^16 ≤2×10^16 ≤2×10^16
n type lifetime,㎲≥500 ≥300 ≥100
ingot spec
Growth Method CZ 단정결제조과정을거쳐서얻어내는방법
conductive Type P 전도유형
Dopant Boron 섞인잡질(반도체[순수한물질]에첨가하는미세한불순물)
Orientation <100> 경향(방위)
Off Orientation <±3° 벗어나경향(방위)
Resistivity(p) -2Ω·cm or 3-6Ω·cm 저항률범위
Minority Carrier lifetime(τd) >10㎲소수운반수명(少数载流子寿命)
Oxygen Content (O₂) ≤×10^18/cm³산소함량
Carbon Content ( C ) ≤×10^16/cm³탄함량
Dislocation Density(Nd) ≤3000/cm² 변위밀도
Apprance No chip,No nick 외관(无裂纹,无硬伤)
Diagonal 6" ,8" 직경
wafer spec
Growth Method CZ 단정결제조과정을거쳐서얻어내는방법
conductive Type P 전도유형
Dopant Boron 섞인잡질(반도체[순수한물질]에첨가하는미세한불순물)
Orientation <100> 경향(방위)
Off Orientation <±3° 벗어나경향(방위)
Resistivity(p) -2Ω·cm or 3-6Ω·cm 저항률범위
Minority Carrier lifetime(τd) >10㎲소수운반수명(少数载流子寿命)
Oxygen Content (O₂) ≤×10^18/cm³산소함량
Carbon Content ( C ) ≤×10^16/cm³탄함량
Dislocation Density(Nd) ≤3000/cm² 변위밀도
Size 103*103±*125±*156± 사이즈
Diagonal Φ135mm± Φ150mm± Φ203mm± 직경
Thickness 200㎛ and others 두께
TTV <50㎛총두께변화
ingot spec
Growth Method CZ
conductive Type N
Dopant Phos
Orientation <100>
Off Orientation <±3°
Resistivity(p) -·cm
Minority C