文档介绍：2007IMP&HIRFLAnnualReport2402lOl8Ol501209060303—8PLCharacterizati0nofGaNIrradiatedbyHighly--chargedIonsZhangLiqing,ZhangChonghong,LiBingsheng,ZhouLihong,YangYitaoandSunYoumei(3)(O)(1)f3)(1)N—typegalliumnitride(GaN)possessesoutstandingphysi—calandchemicalpropertiesandisanexcellentcandidatematerialforapplicationofGaN——cationofthesesdevices,ionsirradiationrepresentsaveryattrac—tivetoolforseveraltechnologicalsteps,suchaselectricaIandop—ticalselective—areadoping,dryetching,andion—,systematicstudiesofthephotoluminescencecharac—teristicsofGaNexposedtoionirradiationarenecessaryforaSUC—cessfu1applicationofionimplantationinthefabricationofGaN—,wefocusonstudyingOkePLvc≤haEk<racter—ization..1ofvelengm(衄)即byXC+(k)ineticenerg(120y18u≤~600keV)),pbqE360700keVandAr1220keV十(k一,)十(20keV≤,、Ek≤,、)ionswithdifferentinfluenceintwogeometries.._1PL鼍c仃?±krentd0ntwu!::dose,theintensityfI1owluminescence(YL)bandofGaNir—iN1iometres,meansnormancidencedose,ce工LwhileTmeans60。off-,,afterirradiation,thebandedgepeakalsodisappear