文档介绍：Intel’sLowPowerTechnologyWithHigh-KDielectricBalapradeepGadamsettiWhythisisrequired?ContinuationofMoore’?Asimpleswitch-currentflowsfromsourcetodrainwhengateisatcertainvoltage;otherwiseitdoesn’tflowGatedielectrics(SiO2)!!SeekingnewmaterialstodriveMoore’sLawReplacingSiO2achallenge?MaterialschosenforreplacingSiO2shouldbethicker(toreduceleakagepower)butshouldhavea“high-K”-K?Ameasureofhowmuchchargeamaterialcanhold.“AIR”isthereferencewith“K=1”."High-k"materials,suchashafniumdioxide(HfO2),zirconiumdioxide(ZrO2)andtitaniumdioxide(TiO2)onstantor"k",the"k"’swithHigh-KThresholdVoltagePinning-high-patibleduetoFermilevelpinningattheHigh-KandPolysiliconinterfacewhichcauseshighthresholdvoltagesintransistorsPhononscattering-High-K/Polysilicontransistorsexhibitseverelydegradedchannelmobilityduetothecouplingofphononmodesinhigh-!!!High-patibleMobilitydegradationinHigh-k\PolySi