文档介绍：摘要30,75,120,180W得到了氩等离子体鞘层附近区域的发射光谱。原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度。改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大。低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显。通过对探针诊断和OES谱线的分析,调整预想的ICP实验系统,在射频功率120W,~,衬底温度150—200℃条件下,采用ICPECVD以SiH4和心为反应气体分别在单晶硅和载玻片衬底上沉积制备多晶硅薄膜。对得到的实验样品薄膜的OES、AFM、XRD等分析表明:在等离子体鞘层附近区域观察到414rim的Sill*,486nm的HB·,656nm的H,,415rim以及434nm处的心+等发射光谱特征峰的出现。薄膜样品的表面形貌均匀整齐、无明显缺陷、一致性高。,其中单晶硅衬底的样品薄膜的X射线衍射图在Si(111)晶向显现衍射峰,FWHM为d=,呈微晶态。载玻片衬底的样品薄膜显非晶态。关键词:多晶硅薄膜、ICP等离子体、缸稀释、等离子参数nAbstractl[I[1[f[rl[1l[1(I\1768179PreparationofPoly-·SiliconThinFilmbyICPECVDAbstractMajor:MicroelectronicsandSolidStateElectronicsName:MengRanSupervisor:ChenJun—fangBecauseoftheoil,natul锄gasandothertraditionalenergypricesrisingtoday,renewableenergy-,withthethird—generationthinfilmsolarcellsonthein-depthstudy,inordertoimprovethepolycrystallinesilicon,microcrystallinesiliconthinfilmsolarcellconversionefficiency,andmakessolarcellsintothedailyworkandlivingofhumanlife,preparationofhi班quality,low-costpoly-silicon,,usingthetechnicsofICPECVD(inductivelycoupledplasma-enhancedchemicalvapordeposition)preparedpoly-,(theheightofthereactionchamber)wenthi曲,,Ⅲarea(h=3-10cm),,intheregionofI(h=0~3cm)plasmadensityCallbeidentifiedasastableanduniformdistributionforlarge-scalepreparingpoly-,plasmadensitybecamebiggerasRFpowerincreased,,wethinkthatduringalargescaleuniformAbstractpla