文档介绍：华中科技大学
硕士学位论文
ZnO、ZnS一维纳米材料的制备
姓名:张翔晖
申请学位级别:硕士
专业:凝聚态物理
指导教师:高义华
20091001
华中科技大学硕士学位论文
摘要
近年来,ZnO 和 ZnS 等宽禁带一维半导体纳米线的研究成为国际上的研究热点
之一。ZnO 和 ZnS 一维半导体纳米线具有宽直接带隙、高激子束缚能等性质,在紫
外发光器件和光电探测器件等方面有良好的应用前景,在纳米激光器、生物传感器
和光催化等领域也引起了广泛的关注。随着 ZnO、ZnS 等一维纳米材料的研究不断
深入,但 ZnO、ZnS 纳米线及纳米阵列的可控制备问题依然没有得到解决。可控制
备 ZnO、ZnS 一维纳米材料是其应用的基础,本文重点研究了沉积温度、气压、催
化剂和衬底材料在学气相沉积法制备 ZnO 纳米线、纳米线阵列以及气相输运法制备
ZnS 纳米线中的影响,成功地在 GaN 衬底上制备垂直生长的 ZnO 纳米线阵列。同时
利用水的表面张力制备出排列规则的二维单层纳米微球,为纳米微球刻蚀法制备密
度可控的 ZnO 纳米线阵列提供了实验基础。总结为以下几条:
(1)采用化学汽相淀积沉积方法,在蒸发温度 950℃、沉积温度 750℃、真空
压力 5000Pa 下碳热还原 ZnO 粉末,制备出 ZnO 纳米线和纳米线阵列。
(2)利用水的表面张力,在 GaN 衬底表面制备出规则排列二维单层聚苯乙烯
纳米微球。
(3)用气相输运法在 1100℃高温下制备得到 ZnS 纳米线,其生长机理是 V-L-S,
光致发光谱显示在 530nm 处有发光峰。

关键词:氧化锌纳米线阵列化学气相沉积硫化锌光致发光
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华中科技大学硕士学位论文
Abstract
In recent years, one-dimensional wide direct band gap nanowires is the hot topics for
the scientist, such as ZnO and ZnS nanowires. ZnO and ZnS nanowires have a good
prospect in not only UV light-emitting device and photoelectric detector, but also
nano-lasers、Bio-sensors and photo-catalysis. Until now the scientist haven’t Find a
effective process to control the synthesize of ZnO and ZnS nanowires, which is the
foundation of nano-device . This dissertation studied how the factors affect the ZnO/ZnS
nanowires, such as temperature, vacuum pressure, catalyst and substrate. The vertically
aligned ZnO nanowire arrays has synthesized on GaN substrate. The ordered
two-dimensional nano-sphere has prepare on GaN substrate. The main content and
innovation results including the following aspects:
(1) essfully synthesized ZnO nanowires and vertically aligned ZnO nanowire
arrays on the GaN substrate under 950℃ by Chemical Vapor Deposition. The temperature,
vacuum pressure, catalyst and substrate affect the ZnO/ZnS nanowires grows. The best
conditions for grow ZnO aligned arrays is in 750℃ regional and under the vacuum
pressure of 5000Pa.
(2) Ordered two-dimensional nano-sphere has p