文档介绍：华中科技大学
硕士学位论文
相变随机存储器电特性测试方法研究
姓名:盛俊杰
申请学位级别:硕士
专业:微电子学与固体电子学
指导教师:缪向水
20090525
华中科技大学硕士学位论文
摘要
作为目前最有可能取代 FLASH 成为存储器市场上下一代主流产品的相变随机存
储器,在近段时间获得了迅猛的发展。相比其他市场上的主流存储器,相变存储器有
着非易失性、快擦写速度、高可靠性、低功耗、长寿命、与 CMOS 工艺兼容等优点。
然而,在相变存储器飞速发展的同时,相变存储器的相关测试技术也面临了巨大的挑
战,适用于相变存储器特性的测试系统和测试方法也随之成为焦点。基于这一点,本
文研制了一套相变存储器电特性测试系统来测试相变存储器的相关电特性,该系统由
皮秒脉冲发生器、半导体特性测试仪、微控探针台、射频/直流探针、射频电缆以及
6G 示波器组成。
相变存储器的写入、擦除、读出操作可以通过脉冲发生器产生不同幅度和宽度的
激励脉冲来实现。本文基于相变存储器的工作原理,在自主研制的测试平台的基础上,
设计了一系列的相变存储单元电特性的测试方案,包括 I-V/V-I 特性测试、重复性测
试、写脉冲初始条件测试、擦脉冲初始条件测试、稳定性测试、疲劳特性测试,高速
相变存储器电特性测试等。本文还深入探究了相变存储器的最快写入速度,并实现了
200ps 的写入操作。
这些测试方案及测试结果为相变存储器工作速度、功耗、工作寿命等特性的研究
提供了有效的途径和参考,对相变材料特性的研究也具有指导意义。

关键词: 快速、相变存储器、测试方法、测试系统
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华中科技大学硕士学位论文
Abstract
As the most promising candidate for next-generation memory which is the most
likely to replace FLASH, phase change random access memory(PCRAM) which is getting
rapid development nowadays has so many advantages, such as non-volatile property, high
scalability, high operational speed, low power consumption, long life, compatibility with
the CMOS technology and so on. However, the testing of the PCRAM also is a big
challenge. Design of the testing system and the testing methods for the PCRAM has
e the focus. This thesis just develops a testing system and several testing modules for
the PCRAM cell.
The resetting, setting and reading operations can be achieved by changing the
amplitude and width of the test pulse through the controlling board from the pulse signal
source. By the testing system designed by us ,the thesis develop several modules to test the
device performance of the PCRAM cell, which includes voltage-current,resistance-voltage,
resistance-current and fatigue characteristics with the pulse width or amplitude,etc. Many
key parameters, just like the threshold voltage and current, the optimum amplitude and
width of the setting and resetting pulse, can be obtained through these testing modules by
thi