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Tagore Technology Inc. 大功率RF开关.doc

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Tagore Technology Inc. 大功率RF开关.doc

上传人:1801607**** 2021/1/22 文件大小:88 KB

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文档介绍:Tagore Technology Inc. 大功率RF开关
RF SWITCHES
High Power RF switches typically use PIN diode circuits. Switches using PIN diodes have several disadvantages. Pin diode switches require a large bias voltage to handle high RF power. These circuits also require a large bias current to reduce the ON resistance of the PIN diode. Generation of a large voltage from lower battery voltage requires a boost circuit with many active and passive components. GaN switches are the new high performance alternative.
 
Antenna tuning and filter tuning devices require very low resistances and high voltage handling capable RF switches. Low ON resistance is necessary to increase Q and minimize loss of tuning circuit. High Q tuning circuits can experience very large voltages even at low transmit power. Our solution is ideal for Antenna Tuning, and Filter Tuning.
HIGH POWER SWITCH PORTFOLIO – SYMMETRIC SWITCHES
Part Number
Package
VDD Supply
TS7225FK
2T
2T
2T
3T
4T
4T
 
 
 
Reflective
Reflective
Reflective
Reflective
Reflective
Reflective
 
 
 
 
 
 
 
 
 
-6GHz
-6GHz
-6GHz
-3GHz
-3GHz
1M-3GHz
 
 
 
 
 
 
 
 
10W
50W peak
10W
10W
10W
10W
 
 
 
 
 
 
 
 
40/15dB
40/15dB
48/20dB
35/25dB
35/23dB
36/23dB
 
 
 
 
 
 
 
 
3x3
3x3
3x3
3x3
3x3
3x3
3x3
 
 
 
 
 
 
 
SPnT
 Type
Freq (GHz)
(CW)
IL 500M/
max GHz
-
-
-
-
-
-
 
 
 
 
 
 
 
 
H2/3
(35dBm)
Switching
Time
81dBc
81dBc
83dBc
78dBc
77dBc
82dBc
 
 
 
 
 
 
 
 






 
 
 
 
 
 
 
 
TS7224FK
TS7242FK
TS7421L
TS7423L
TS7321FK
TS7226K
TS7232FK
TS7246K
TS7323K
TS7521N*
TS7441L
TS7523N
TS7021N*
Isolation
GHz






 
 
 
 
 
 
 
 
 
10 Watts
20 Watts
30 Watts
50 Watts
100 Watts
2T
Reflect