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63 传感器技术(Journal of Transducer Technology) 2005年第 24卷第 8期
CMOS红外传感器的模型研究
梁振 1 , 于峰崎 2 , 程勇 1
(1. 山东科技大学信息学院,山东青岛 266000;
2. 苏州中科集成电路设计中心 RF项目部,江苏苏州 215021)
摘要: 对基于标准 CMOS工艺的二极管型红外传感器进行物理建模和理论推导,并对所建模型进行了
仿真。该红外传感器利用二极管两端的电压随温度变化特性来感测红外线。从电流2与温度变2 化的关系着
手,推导出电压与温度变化关系,对红外传感器的一些重要参量进行了讨论。仿真结果表明:所建模型基
本与实验结果相符。
关键词: 红外传感器; 二极管; 理论模型
中图分类号: TN401 文献标识码: A 文章编号: 1000 - 9787 (2005) 08 - 0036 - 03
Research on CMOS infrared sensor model
L IANG Zhen1 , YU Feng qi2 , CHENG Yong1
( 1. Coll of Info Shandong Un iversity of Sc ience and Technology, Q ingdao 266000, Ch ina;
2. RF D epartm en t, Suzhou CAS In tegra ted C ircu it D esign Cen ter, Suzhou 215021, Ch ina)
Abstract: An infrared sensor based on a suspended p + active /n well diode fabricated in a standard CMOS
p rocess is studied. Its theoretical model is built and simulated. The infrared sensor detects the infrared light by
measuring the diode junction voltage which varies with temperature. Starting with the relationship between electric
current and temperature change, the relationship of voltage and temperature is deduced. A lso some important
parameters of the infrared senor are studied. Simulation results show that the model agrees with experimental
results.
Key words: infrared sensor; diode; theoretical model
0 引言传感器利用了 p + active /n well二极管两端的电压随温度
红外传感器是一种红外辐射