文档介绍：A605 Surface Science 292 (1993) 114-120 North-Holland Kink assisted growth of single height steps on the Si(001)-2 x 1 surface . Toh, . Seow and . Ong Department of Phystcs, Nattonal Umverstty of Singapore, 10 Kent Padge Crescent, Singapore 0511, Singapore Received 18 March 1993, accepted for pubhcatlon 6 Aprd 1993 We use a modified form of the Stdhnger-Weber potential to obtain the various binding sites and diffusion bamers of a Sl adatom in the wcmlty of a rebonded and nonbonded S n kank, as well as near the pure S A step We report a novel behawour of S B kinks as "attractors" for adatoms Results obtained pared with STM observations to give a coherent picture of single height step growth Surface Science 292 (1993) 121-129 North-Holland XPS investigation of the a-C" H/AI interface R. Hauert, J Patschelder Swtss Federal Laboratortes for Materials Testing and Research (EMPA), Ueberlandstrasse 129, CH-8600 Dubendorf, Switzerland M. Tobler Berna AG, lndustrtestrasse 36, CH-4600 Olten, Swttzerland and R Zehrlnger Almaden Research Center, IBM Research Dwtston, 650 Harry Road, San Jose, CA 95120-6099, USA Received 21 December 1992, accepted for publication 8 April 1993 The original state of the interface between ultrahard amorphous hydrogenated carbon (a-C H) and aluminum was analyzed by non-destructive m-situ direct Ion beam deposition (CH4, -400 V)