文档介绍：第 38 卷第 1期 光电工程 , 2011 年 1 月 Opto-Electronic Engineering Jan, 2011 文章编号: 1003 -501X(2011)01 -0001 -05 基于 APD 的远程激光测距系统光电匹配研究胡建人( 杭州电子科技大学理学院,杭州 310037 ) 摘要:针对主动式红外弱光检测,本文研究如何提高和稳定雪崩光电二极管 APD 电路增益,及其光电匹配参数。该方法根据 APD 增益或噪声与反向偏压分别呈指数或线性关系,采用温度补偿电路稳定 APD 偏压,通过调整串联稳压管获得接近 APD 的温度系数,使器件工作点接近其击穿电压,获得超 100 倍的增益。采用交流耦合的本级负反馈低电压低噪声 NPN 晶体管电路,提高频响和晶体管截止频率 f。在保持电路稳定性的前提下,电压增益可提高到原来的 2 ～ 3倍,光电系统灵敏度提高 23 dB 以上。功率激光二极管 LD 的 PN 结温度变化导致波长漂移, 难与极窄带宽匹配。抑制背景辐射的干涉滤光片带宽介于 10 ～ 15 nm 为宜。关键词:雪崩光电二极管/APD ;低噪声放大电路;温度补偿电路;窄带宽干涉滤光;红外背景辐射中图分类号: TN2 ; 文献标志码:A doi: .1003- Research of Opto-electro nic Match in Long-distance Laser Ranging System Based on APD HU Jian-ren ( Science School , Hangzhou Dianzi University , Hangzhou 310037, China ) Abstract : Aimed at active weak IR detection, how to get the stable high gain from Avalanche Photodiode (APD) circuits and its opto-electronic matching characters are researched . The methods are relation with APD exponent gain and linear noise with its reverse bias voltage. It gets closed to temperature coefficient by serial Zener diodes and always-stable bias voltage to APD near break voltage at real PN junction te mperature, and is over 100 times gain with temperature complement circuits. Transistor cut-off frequency and its resp onse are increased by NPN type transistor with an imp