文档介绍：ICMOVPE IX Report
ELOG GaN further extends
performance records
Alan Mills
La Jolla, California was the venue for the June 1998 biennial 'International Conference on Metal Organic
Vapour Phase Epitaxy' (ICMOVPE IX), which was held under the auspices of The Metals, Minerals and
Materials Society (TMS). The meeting provided a window on the wide range of products and technologies
that use MOVPE processes and an overview of the increasing number of MOVPE-based products that are be-
ing produced today or that will soon be providing us with additional technological benefits.
'n the drive to succeed in the several other research laboratories. growth and produce fiat GaN sur-
production of commercial blue In his plenary lecture, Nakamura faces by the time that a 20 ktm lay-
l .wavelength diode-lasers, tech- provided the latest results in the er of nitride has been grown.
nology advances such as process application of ELOG processes to Transmission electron microscope
and yield improvements, extended the development of improved GaN (TEM) images of this layer showed
laser lifetimes and more stable op- lasers and homoepitaxial wafers. that dislocation densities were sig-
eration are being sought