文档介绍：Wafer Fabrication
Process
Technology
CMOS
Content
CMOS process flow& cross section
CMOS process flow&cross section
PCM introduction
CMOS
Starting with a silicon wafer
Cross Section of the Silicon Wafer
Magnifying the Cross Section
CMOS
n/p-well Formation
Grow Thin Oxide
Deposit Nitride
Deposit Resist
silicon substrate
UV Exposure
Develop Resist
Etch Nitride
n-well Implant
Remove Resist
CMOS
n/p-well Formation
silicon substrate
Grow Oxide (n-well)
Remove Nitride
p-well Implant
Remove Oxide
Twin-well Drive-in
p-well
n-well
Remove Drive-In Oxide
silicon substrate
p-well
n-well
CMOS
LOCOS Isolation
Grow Thin Oxide
Deposit Nitride
Deposit Resist
UV Exposure
Develop Resist
Etch Nitride
Remove Resist
CMOS
LOCOS Isolation
silicon substrate
p-well
n-well
Deposit Resist
UV Exposure
Develop Resist
Field Implant B
Remove Resist
Grow Field Oxide
Fox
Remove Nitride
Remove Oxide
silicon substrate
p-well
n-well
Grow Screen Oxide
CMOS
Transistor Fabrication
Vt Implant
Deposit Resist
UV Exposure
Develop Resist
Punchthrough Implant
Remove Resist
Remove Oxide
Fox
silicon substrate
p-well
n-well
Grow Gate Oxide
CMOS
Transistor Fabrication
Deposit PolySi
PolySi Implant
polySi
polySi
Deposit Resist
UV Exposure
Develop Resist
Etch PolySi
Remove Resist
Fox
silicon substrate
p-well
n-well
CMOS
Transistor Fabrication
Deposit Thin Oxide
Deposit Resist
UV Exposure
Develop Resist
n-LDD Implant
Remove Resist
Fox
polySi
polySi