文档介绍：Effect of a step quantum well structure and an electric-field on the Rashba
spin splitting Project supported by the State Key Development Program for Basic Research of China (Nos. 2006CB921607, 2006CB604908) and the National Natural Science Foundation of China (No. 60625402).
j* Corresponding author. Email: ******@
Received 15 December 2008, revised manuscript received 16 January 2009 c 2009 Chinese Institute of Electronics
Hao Yafei( ), Chen Yonghai( )+, Hao Guodong( ), and Wang Zhanguo( )
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
100083, China)
Abstract: Spin splitting of conduction subbands in Gai-X As/ As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the