文档介绍：第 I 页
摘 要
本文论述了一个Ka频段1W固态功率放大器设计和研制。
设计中，采用毫米波微带混合集成技术，实现了标准BJ320波导接口的毫米波固态功率放大。波导－微带过渡使用比较成熟的毫米波E－面微带探针结构，确定了由毫米波中功率MMIC驱动末级高功率MMIC的两级功率放大方案。经理论推导及电磁仿真优化，设计了放大器微带集成波导端口无源网络，并加工和测试，实验表明，在33－36GHz范围内插入制作的波导－，回波损耗优于-20dB，结果及理论分析一致。
在此基础上，采用毫米波固态器件精密装配工艺，安装了驱动级和末级功率单片：AMMC－5040、TGA1141－EPU。经调试和测量，在33-36GHz的范围内实现了,小信号增益大于37dB，，在33GHz达到最大，。毫米波功率放大器指标达到了设计要求。
本文论述的毫米波固态高功率放大器，电路结构简洁、便于加工及实现，具有一定的工程设计及研究价值。所设计的毫米波固态功率放大器，在较宽频带内实现了较高的增益放大以及较大的功率输出，使用方便，可广泛地应用于毫米波通信、雷达等系统中。
关键词：毫米波、功率放大器、毫米波混合集成、波导－微带E面探针、功率
ABSTRACT
This paper discusses the design and development of a solid-state power amplifier in Ka-band, which has an output power over 1 watt.
The design adopts millimeter wave microstrip hybrid integrated technique, carries out the millimeter wave solid-state power amplifier with the standard BJ320 waveguide ports. Transitions from waveguide to microstrip use a matured structure of microstrip E-plane probe. The amplifier use method of two-class power-amplifying, which employ a middle power MMIC driving an end class high power MMIC. By theory deducing and electromagnetism emulation, a passive network was fabricated and the measured result indicates that the insert loss of the single transitions from waveguide to microstrip is less than dB and the return loss is less than -20 dB, in 33~36 GHz. This results and theories meet a good agreement.
On this basic, this amplifier adopted a precision technique assembling millimeter wave solid-state devices, ., AMMC－5040 and TGA1141－EPU respectively. The measured results indicate that the small signal gain is over 37dB, and the saturated output power is over . A maximum output power, , is obtained in the 33GHz.
The solid-state high power amplifier discussed in this paper has a simple structure of circuit, which is easy to manufacture and realize, and is valuable of engineering design and research. This fabricated solid-state power amplifier, possessing a high gain a