文档介绍：Thin-film transistors based on p-type Cu 2 O thin films produced at room
temperature
Elvira Fortunato, Vre used to produce bottom gate p-type transparent thin-film
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transistors TFTs .Cu2O was deposited by reactive rf magnetron sputtering at room temperature and
the films exhibit a polycrystalline structure with a strongest orientation along ͑111͒ plane. The TFTs
exhibit improved electrical performance such as a field-effect mobility of cm2 /V s and an
on/off ratio of 2ϫ102.©2010 American Institute of Physics. ͓doi:
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Solid state devices based on cuprous oxide Cu2O semi- important defects in Cu2O and Fig. 1 c reveals the simple
conductors are known for more than 80 years even before the electronic model proposed by Brattain,12 consisting
era of Si devices. Rectifier diodes based on this semiconduc- of a compensated semiconductor with one acceptor level at
tor were used industrially as early as 1926 ͑Ref. 1͒ and most eV and a deep donor level at eV from VB.
of the theory of semiconductors was developed based on The development of p-n junctions and p-type thin-film
2–4