文档介绍：10-3
A 5 kV HBM transformer-based ESD protected 5-6 GHz LNA
J. Borremans'1, S. Thijs2, P. Wambacql 2, D. Linten , Y,.Rolain1 and M. Kuijkl
1 Vrije Universiteit Brussel, Brussels, Belgium,
2IMEC, Leuven, Belgium
Abstract of the transistor, heavily attenuating the possible residual
voltage overshoot at the input for the ESD frequency range,
Integrated designs in deep-submicron CMOS require ESD and thus increasing the protection level.
protection for their I/O pins. Since CMOS scaling drastically vdd vdd
lowers the breakdown voltage of a MOS transistor, the
available design window for ESD protection is narrowing. An LD LD
inductor-based ESD protection offers superb protection but is
severely area consuming. In this paper we propose a ESD out ESD protection 1 out
transformer-based ESD protection for inductor-based LNAs. protection +RF functionality
We demonstrate that the proposed technique offers excellent in CESD k
r" H Mn
ESD protection andRFperformancewithoutthe loss ofarea. Mn1 H
Keywords: LNA, ESD protection, transformer, low area,
CMOS. LESD 2 LS
I I ~~~~~Lsi
Introduction
While CMOS scales towards 45 nm, the oxide breakdown
voltage decreases as the gate oxide es thinner. As a Fig. 1 - Classical inductor-based ESD protection (left) and proposed
consequence, a classical dual-diode ESD protection requires
larger input diodes lowering the diode