文档介绍：Local ESD protection structure based on Silicon
Controlled Rectifier achieving very low overshoot voltage
Johan BOURGEAT (1)(2)(3), Christophe ENTRINGER (1), Philippe GALY (1), Pascal
FONTENEAU (1) and Marise BAFLEUR (2)(3)
(1) STMicroelectronics, 850, rue Jean F-38926 Crolles cedex; tel : (+33)4 76 92 66 96 ; fax : (+33) 4 76 92 57 69
e-mail : @,
(2) CNRS; LAAS; 7 avenue du colonel Roche, F-31077 Toulouse, France
(3) Université de Toulouse; UPS, INSA, INP, ISAE; LAAS; F-31077 Toulouse, France
Abstract - This paper presents a new local ESD protection structure. This structure is based on static triggered
SCR and realized in a 45nm CMOS technology node. This protection achieves very low static triggering
voltage, low on-resistance, low DC leakage current for off configurations. This new structure is latch-up free
and fail safe.
and the saved area is 60% for the ESD protection in
I. Introduction the power domain, and 20% for the ESD
The purpose of this work is the development of local protection in the power domain. The paper is
ESD protection structures in the same way as anized in six sections, the first one being the
authors in [1]. Local protections can be used at the introduction. In section II, a new structure based on
signal pads to provide a direct ESD current path from the SCR device is presented. Charac