文档介绍：Microelectronics Reliability 50 (2010) 831–838
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Microelectronics Reliability
journal homepage: ate/microrel
Design of differential low-noise ampliﬁer with cross-coupled-SCR ESD
protection scheme
Chun-Yu Lin a,*, Ming-Dou Ker a,b, Yuan-Wen Hsiao a
a Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan
b Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan
article info abstract
Article history: The pin-to-pin electrostatic discharge (ESD) stress was one of the most critical ESD events for differential
Received 7 December 2009 input pads. The pin-to-pin ESD issue for a differential low-noise ampliﬁer (LNA) was studied in this work.
Received in revised form 9 February 2010 A new ESD protection scheme for differential input pads, which was realized with cross-coupled silicon-
Available online 7 April 2010
controlled rectiﬁer (SCR), was proposed to protect the differential LNA. The cross-coupled-SCR ESD pro-
tection scheme was modiﬁed from the conventional double-diode ESD protection scheme without adding
any extra device. The SCR path was established directly from one differential input pad to the other dif-
ferential input pad in this cross-coupled-SCR ESD protection scheme, so the pin-to-pin ESD robustness