文档介绍：Microelectronics Reliability 46 (2006) 1800–1805
ate/microrel
Electrical parameters degradation of power RF LDMOS device
after accelerated ageing tests
. Belaïd*, K. Ketata, M. Masmoudi, M. Gares, H. Maanane, J. Marcon
LEMI, University of Rouen, IUT Rouen, 76821, Mont Saint Aignan, France
Abstract
This paper reports novel methods for accelerated ageing tests, parative reliability between them for
stresses applied on power RF LDMOS: Thermal Shock Tests (TST), Thermal Cycling Tests (TCT), High Voltage
Drain (HVD) and coupling thermal and electrical effects under various conditions. The investigation findings
obtained after various ageing tests show the degradation and the device’s performance shifts for most important
electric parameters such as transconductance (Gm), on-state resistance (Rds_on), feedback capacitance (Crss)and gate-
drain capacitance (Cgd). This means that the tracking of these parameters enables to consider the hot carrier injection
as the dominant degradation phenomenon. However, this is explained by excitation and trapping of electrons in the
oxide-silicon interface at the drain side. A physical simulation software (2D, Silvaco-Atlas) has been used to locate
and confirm degradation phenomena.
1. Introduction current unlimited and therefore leading to serious risk
of damage [4].
The device’s lifetime is one of