文档介绍：Hot Carrier Degradation in LDMOS Power Transistors
Chih-Chang Cheng, J. W. Wu, C. C. Lee, J. H. Shao and T. Wang
Dept. of Electronics Engineering, National Chiao-Tung University,
1001 University Road, Hsin-Chu 300, Taiwan
Phone: (+886)-3-571212 1 Fax: (+886)-3-5724361 Email: .
Abstract -- The hot carrier performance of N-LDMOS
and P-LDMOS transistors is evaluated. For N-LDMOS
transistors, the drain current degradation is shown to be
due to hot electron injection in the drift region field oxide
(bird's beak edge). On the other hand, the hot
carrier-damaged region of P-LDMOS transistors is within
the channel region, and hot electron is also the source of
degradation. n-epi
Keyword: hot carrier, LDMOS, Power device, impact
ionization
The cross Section of a N-LDMOS transistor.
1. Introduction
The market of smart-power technologies, which is
mainly based on the introduction of LDMOS transistors in 2. Results and Discussion
a standard CMOS process flow, has undergone an demonstrates the cross section of a LDMOS
increasing growth in the recent years, due to the chip cost transistor. The device features an n-well for on-resistance
reduction and flexibility of applications [l]. An important control and an extended drain region under the field oxide
topic of these devices is the hot carrier