文档介绍：15PSD'ZOOO. May ZZ-25. Toulouse, France
Reliability Characterization of LDMOS
Transistors submitted to Multiple Energy
Discharges
Jean-Marc Bosc', Member IEEE, Isabelle Percheron-Garcon', Estelle Huynh', Phillipe Lance',
Irenee Pages', ,
In such applications, ponents are submitted to
Abstract In this paper, we show on an example how repetitive energy discharges, which induce a drastic
thermal characterization on test vehicules supported by temperature rise in the silicon. This temperature rise can
simulation can be used to define a consistent Accelerated cause immediate &lure due to several phenomena [I] or
Stress Test for power IC's. We describe the reliability evolutionary degradation due to thermal fatigue resulting
program to access the long-term behavior of LDMOS from temperature cycles applied on the device.
transistors. After the study of the advantages and
limitations of the back body diode thermal measurement Furthermore, when such devices are excited by short
method, we have investigated in this work the thermal duration discharges (<2ms), the temperature rise is
limits of the tested transistors. Then, using a dedicated test located within the die. The device package, even with an
bench, we have evaluated the reliability of the devices additional heat spreader does not play a major role and so