文档介绍：320 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 18, NO. 2, MAY 2005
SCR Device Fabricated With Dummy-Gate Structure
to Improve Turn-On Speed for Effective ESD
Protection in CMOS Technology
Ming-Dou Ker, Senior Member, IEEE and Kuo-Chun Hsu, Member, IEEE
Abstract—Turn-on speed is the main concern for an on-chip [5], [6]. But, SCR still has a higher switching voltage ( V)
electrostatic discharge (ESD) protection device, especially in the in - m CMOS technology, which is generally greater than
nanoscale CMOS processes with ultrathin gate oxide. A novel the gate–oxide breakdown voltage of the input stage. So, it is
dummy-gate-blocking silicon-controlled rectifier (SCR) device em-
ploying a substrate-triggered technique is proposed to improve the imperative to reduce the switching voltage of the SCR and to
turn-on speed of an SCR device for using in an on-chip ESD pro- enhance the turn-on speed of SCR for efficiently protecting
tection circuit to effectively protect the much thinner gate oxide. the ultrathin gate oxide from latent damage or rupture, espe-
The fabrication of the proposed SCR device with dummy-gate cially against the faster charged-device-model (CDM) [7] ESD
structure is fully patible with general CMOS process,
without using an extra mask layer or adding process steps. From events. Some reports had presented solutions (such as modified
t