文档介绍：Microelectronics Reliability 46 (2006) 994–1000
ate/microrel
Research note
Study of RF NÀ LDMOS critical electrical parameter
drifts after a thermal and electrical ageing in pulsed RF
H. Maanane a,*, M. Masmoudi a, J. Marcon a, . Belaid a, K. Mourgues a,
C. Tolant b, K. Ketata a, Ph. Eudeline b
a LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan, France
b THALES Air Defence, ZI du Mont Jarret, 76520 Ymare, France
Received 3 February 2005; received in revised form 15 July 2005
Available online 9 September 2005
Abstract
An innovative reliability test bench dedicated to RF power devices is currently implemented. This bench allows to
apply both electric and thermal stress for lifetime test under radar pulsed RF conditions. This paper presents the first
investigation findings of critical electrical parameter degradations after thermal and electrical ageing. It shows that the
tracking of a set of parameters (drain–source current, on-state resistance, threshold voltage, feedback capacitance and
transconductance) can give insight into the hot carrier injection phenomenon for a RF nÀ channel lateral DMOS (NÀ
LDMOS) working under pulsed conditions.
Ó 2005 Elsevier Ltd. All rights reserved.
1. Introduction bias stress conditions) [3–5], but rare reliability studies
are achieved under pulsed RF operating conditions
Since the introduction of so