文档介绍：------------------------------------------------------------------------------------------------ —————————————————————————————————————— Cr_2O_3 掺杂对钡硼硅微晶玻璃的性能影响_ 徐明江第36卷第2期2014年04月压电与声光 PIEZOELECTRICS &ACOUSTOOPTI CS ()24020410047420140248 文章编号:--- CrO23掺杂对钡硼硅微晶玻璃的性能影响李波徐明江, () 电子科技大学微电子与固体电子学院, 四川成都60054 1 采用固相合成法制备了高膨胀系数钡硼硅微晶玻璃材料。通过对该微晶玻璃进行X线衍射仪摘要: 、(扫描电子显微镜(测试分析研究铬掺杂对B热、电性能及微观机理的影响。结果显iaO-BD ) SEM ) OXRS2O3-2 力、示, 热膨胀系数与介电损耗随C加入C研究表明, 并促使晶rr 2O3含量增加而增大, 2O3会促进该体系晶粒的生长, 相由石英晶相转变为方石英晶相, 方石英热膨胀系数较高, 其晶相含量增多导致热膨胀系数增大。该体系Cr2O3 ------------------------------------------------------------------------------------------------ ——————————————————————————————————————-6 ),/℃), 较低相对介电常制备出具有较高热膨胀系数( (5%时,44 × )数(的封装材料。 ; 热膨胀系数; 钡硼硅; 晶相含量关键词: 三氧化二铬( Cr2 O3) 中图分类号:174 文献标识码:ATQ EfOntBOSilcefectofCrheProer tiesofBaOOassramics --- 23o232Gp ,XU MinianLIBo gjg (,,) ScSthoolofMicroelectronic sandSolidateElectronicsUniver sitofElectronicScienceandTech noloofChinaChendu610054 , China- ygyg : solidstractBaO-BOassramicsw ithhihthermalexansioncoeffici entwasmadebatemethbSilcest A---gpy2O3-2G SEMandXRD . Itturned . Thehaseco ------------------------------------------------------------------------------------------------ —————————————————————————————————————— mositionandmicrostructureofth eGlassramicswerecharacterized bodce -ppy outthatthethermalexansionco efficientanddielectriclossinc reasedwiththecontentofCrheres ultsshowedT p2O3. andtheuartzwastransformedin tothecristobalite . Bethatthecrs eleratedbecause ofCr- ygq2O3 , ,causeofthehihthermal exansioncoefficientofcristoba litetheincreaseofcristobalite accountedfortheincreaseof gp eileramics . TheBaO-BOassramic sweremadewithhihthercScthethe rmalexansioncoefficientofGlas s ------------------------------------------------------------------------------------------------ ——————————————————————————————————————--- gp2O3-2G-6 ,)( mahihblexansioncoefficient (18 . 44 × 10/ ℃) endinstrenth ( 187MP onstan