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快恢复二极管特征设计--ixys.pdf

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快恢复二极管特征设计--ixys.pdf

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文档介绍:Fast Recovery Epitaxial Diodes (FRED)
Characteristics - Applications - Examples ry, low reverse recovery cur-
duces the weight and volume of the rent or have used a PWM frequency rent I with short reverse recovery
RM
transformer. This development has above 20 kHz in order to operate above times.
been significantly influenced by new, the audible level.
fast switching power transistors, such
1) MOSFET = Metal Oxide Semiconductor Field
as MOSFETS or IGBTs, working at high Effect Transistor
blocking voltages (V > 600 V). 2)
CES IGBT = Insulated Gate Bipolar Transistor
Technologies processes. But as shown in Fig. 1, each charges (in this case holes) being stored
technology must come up with a its own there. When this forward current is com-
The abbreviation FRED (Fast Recovery compromise between forward voltage mutated to another switch, the diode
Epitaxial Diodes) stands for a series of and recovery time to obtain a device that cannot regain its reverse blocking capa-
ultrafast diodes, which have gained wide will operate sat