真空蒸镀法制备巨磁阻抗材料.pdf.pdf

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第 31卷第 4期浙江师范大学学报(自然科学版) Vol. 31, No. 4
2008年 12月 Journal of Zhejiang Normal University(Nat. Sci. ) Dec. 2008
文章编号: 1001 5051 (2008) 04 0406 05
真空蒸镀法制备巨磁阻抗材料
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叶晶, 彭保2 进, 潘行心, 余育君, 方健文, 王辉
(1. 浙江师范大学信息光学研究所,浙江金华 321004; 2. 台州职业技术学院电子电气系,浙江台州
3318000)
摘要:采用真空蒸镀法在玻璃基片上制备具有巨磁阻抗效应的单层 FeSiB 薄膜. 通过改变驱动电流方向和
外磁场方向,得到 4种测量巨磁阻抗效应的方式. 通过比较发现,只有当外加磁场和单轴磁各向异性方向垂直
时才有比较明显的巨磁阻抗效应的出现,并比较了磁各向同性和磁各向异性 FeSiB 薄膜的巨磁阻抗效应. 验
证了用真空蒸镀法能够制备具有巨磁阻抗效应材料的可行性.
关键词:蒸镀; FeSiB;巨磁阻抗效应;各向异性
中图分类号: TB383 文献标识码: A
Vacuum evapora tion prepare g ian t o im pedance ma ter ia ls
YE J ing1 , PENG Baojin1 , PAN Xingxin2 , YU Yujun1 , FANG J ianwen1 , WANG Hui1
(1. Institute of Inform ation Optics, Zhejiang N orm al University, J inhua Zhejiang 321004, China; 2. Departm ent of Electronic and Electrical,
Taizhou Technical College, Taizhou Zhejiang 318000, China)
Abstract: The single layer FeSiB film which had giant o impedance effect was p repared in glass sub
strate by vacuum evaporation. V ia changing the direction of drive current and external ic field, four
modes of measuring o impedance effect were obtaison. paring, it was found that only when
the direction of external ic field and uniaxial ic anisotropy was apeak, there was an obvious ap
pearance of GM I effect. Consequently, the feasibility of p reparing the