文档介绍：该【汽车电子系统中英文对照外文翻译文献 】是由【1781111****】上传分享，文档一共【40】页，该文档可以免费在线阅读，需要了解更多关于【汽车电子系统中英文对照外文翻译文献 】的内容，可以使用淘豆网的站内搜索功能，选择自己适合的文档，以下文字是截取该文章内的部分文字，如需要获得完整电子版，请下载此文档到您的设备，方便您编辑和打印。:..)TheChangingAutomotiveEnvironment:High-,Fellow,IEEE,,PeterJacobsen,JamesR.(Rick)Thompson,andMarkChristopherAbstract—℃.However,extremecostpressures,increasingreliabilitydemands(10year/241350km)andthecostoffieldfailures(recalls,liability,customerloyalty)℃orlessand1:..willbeworstcasetemperatures,-by-wiretechnology,℃to200℃.,-,--temperatureelectronicsuseinautomotivesystemswillcontinuetogrow,,thepackaginglimitationsevenat125Cwithnewerpackagestylesandconcludeswithareviewofchallengesatboththesemiconductordeviceandpackaginglevelastemperaturespushbeyond125℃.IndexTerms—Automotive,extreme-,theaverageautomobilecontained$110worthofelectronics[1].By2003theelectronicscontentwas$1510pervehicleandisexpectedtoreach$2285in2013[2].TheturningpointinautomotiveelectronicswasgovernmentTABLEIMAJORAUTOMOTIVEELECTRONICSYSTEMS2:..AUTOMOTIVETEMPERATUREEXTREMES(DELPHIDELCOELECTRONICSYSTEMS)[3],powerdissipationbytheelectronics,-temperatureelectronicsaselectronicsoperatingabove125℃.However,[3].℃to15℃higherthanambientorbaseplatetemperature,whilepowerdevicescanreach25℃-emperaturesof125℃peakcanbemaintainedbyplacingtheelectronicsonthe3:..(DelphiDelcoElectronicSystems)[3].TABLEIIITHEAUTOMOTIVEENVIRONMENT(GENERALMOTORSANDDELPHIDELCOELECTRONICSYSTEMS)[4]TABLEIVREQUIREDOPERATIONTEMPERATUREFORAUTOMOTIVEELECTRONICSYSTEMS(TOYOTAMOTORCORP.[5]TABLEVMECHATRONICMAXIMUMTEMPERATURERANGES(DAIMLERCHRYSLER,EATONCORPORATION,ANDAUBURNUNIVERSITY)[6]4:..(DaimlerChrysler)[8].electronicsystems[8].[8].-℃,theovertemperaturelightcameonandatthepeaktemperatureof145℃,:..TABLEVI2002INTERNATIONALTECHNOLOGYROADMAPFORSEMICONDUCTORSAMBIENTOPERATINGTEMPERATURESFORHARSHENVIRONMENTS(AUTOMOTIVE)[9]The2002updatetotheInternationalTechnologyRoadmapforSemiconductors(ITRS)plexintegratedcircuits,butdidrecognizeincreasingtemperaturerequirementsforpowerandlineardevicesasshowninTableVI[9].Highertemperaturepowerdevices(diodesandtransistors),,a200℃ratedpowertransistorina200℃,,themaximumjunctiontemperaturesidentifiedforharsh-plexintegratedcircuitswasraisedto150℃through2018[9].The6:..ambientoperatingtemperatureextremeforharsh-plexintegratedcircuitswasdefinedas40℃to125℃through2009,increasingto40℃to150℃-(oneonceramicandoneonthinlaminate)℃to125℃.℃operation,buttheECUislimitedbysemiconductorandcapacitortechnologiesto125℃.ThefutureprojectionsintheITRSarenotconsistentwiththedesiretoplacecontrollerson-engineorin--transmissioncontrollerforuseinanambienttemperatureof140℃[10]-transmissioncontrollerforusewithamaximumambienttemperatureof150℃()[11].,,,:..[11]-transmissionmodule[11].-by-wiresystems,:..ponentssuppliedbynumerousvendorstopletemechatronicsubsystemssimplifythedesign,integration,management,inventorycontrol,,℃Trendsinelectronicspackaging,puterandportableproductsareresultinginpackageswhichwillnotmeetunderhoodautomotiverequirementsat125℃.Mostnotableareleadlessandareaarraypackagessuchassmallballgridarrays(BGAs)andquadflatpacksno-lead(QFNs).℃to125℃resultsfortwosizesofQFNfromtwosuppliers[12].Atypicalrequirementisfortheproducttosurvive2000–2500thermalcycleswith<1%.7presentsthethermalcycleresultsforBGAsofvariousbodysizes[13].ThediesizeintheBGAremainedconstant(*).---mm-,theindustrytrendistousethinnerBTsubstrates()-,therefore,,therefore,providesaviableapproachtomeetingunderhoodautomotiverequirementswithsmallerBGAs,butaddsprocesssteps,time,,℃Thetechnicalchallengesforhigh-temperatureautomotiveapplicationsareinterrelated,butcanbedividedintosemiconductors,passives,substrates,9:..andhousings/-temperatureelectronicsoperatingat200℃,automotiveelectronicsarefurtherconstrainedbyhigh-volumeproduction,lowcost,andlong-,productionvolumesareintherangeof10sor100sand,whilecostisaconcern,,thetechnicalchallengesforhigh-:Themaximumratedambienttemperatureformostsiliconbased10:..integratedcircuitsis85℃,whichissufficientforconsumer,portable,℃.Afewintegratedcircuitsareratedto150℃,,manypowersemiconductordevicesarederatedtozeropowerhandlingcapabilityat200℃.-gatebipolartransistors(IGBTs)andmetal–oxide–semiconductorfield-effecttransistors(MOSFETs)canbeusedat200℃[14],[15].Theprimarylimitationsofthesepowertransistorsatthehighertemperaturesarethepackaging(poundsisinthe180℃to200℃range),,thesiliconp-esintrinsicathightemperature(225℃to400℃dependingondopinglevels).arrierconcentrationisgivenby(1)11:..Asthetemperatureincreases,,p-njunctionsbehaveasresistors,notdiodes,-temperatureintegratedcircuitdesignistoincreasethedopinglevels,,increasingthedopinglevelsdecreasesthedepletionwidths,-biasedp--biasedp-(I,theidealreverse-biascurrentofthejunction)arrierconcentrationwhereEgo=bandgapenergyatT=0KTheleakagecurrentapproximatelydoublesforeach10℃-upoftheparasiticp-n-p-nstructureincomplimentarymetal–oxide–semiconductor(CMOS)-CMOS(epi-CMOS)hasbeendevelopedtoimprovelatch-upresistanceasthedevicedimensionsaredecreasedduetoscalingandprovidesimprovedhigh--on-insulator(SOI)technologyreplacesreverse-biasedp-njunctionswithinsulators,typicallySiO2,red