文档介绍：摘 要
利用常规射频等离子体增强化学气相沉积(PECVD)方法,以高 H2 稀释的 SiH4 作为反应气体源,和以 H2 稀释的 B2H6 作为掺杂剂,通过改变掺杂浓度与衬底温度等工艺参数,在玻璃衬底上制备了掺硼 P 型氢化纳米硅晶(nc-Si(B):H)薄膜。利用α-台阶仪测量了薄膜厚度,采用紫外可见近红外分光光度计(UV-VIS-NIR)、半导体分析测试仪对制备的薄膜样品进行了光电特性测试。结果指出,在 B2H6 /SiH4=%时薄膜的光学带隙为 和电导率为 -1cm-1,它可以充当 p-i-n 型薄膜太阳电池的窗口层。分析与讨论了不同衬底温度对本征 nc-Si:H 薄膜结构及光电性能的影响,发现当衬底温度为 250℃时,薄膜有合适的晶化率与晶粒尺寸,其晶化率为 %,晶粒尺寸为 。并呈现出良好的均匀性,具有良好的光吸收能力和较高的电导率。以 nc-Si(B):H 为窗口层,以本征 nc-Si:H 为有源层,制备了 p-i-n 结构太阳电池,指出当本征 i 层厚度为 800nm
时,p-i-n 结构太阳电池获得了:Voc=,Jsc=,FF= 和η=%的光伏性能。
关键词: PECVD;nc-Si:H 薄膜;结构表征;光电特性 ;p-i-n 结构;太阳电池
Abstract
P-type boron-doped hydrogenated nanocrystalline silicon (nc-Si(B):H) thin films were deposited on ordinary glass substrate by conventional radio frequency plasma enhanced chemical vapor deposition (PECVD) through changing the process parameters such as the doping concentration, substrate temperature, using SiH4 and H2 as reaction gas sources, % B2H6 as dopant diluted by H2. The films thickness was measured by Alpha step apparatus. Photoelectric properties were characterized and analyzed by ultraviolet visible near infrared spectrophotometer (UV-VIS NIR) and semiconductor tester. The results showed that the optical band gap of the film is and conductivity is -1cm-1 while broane concentration B2H6 /SiH4=%.It is suitable for window layers of nc-Si:H p-i-n solar cells. Structure characterization and photoelectric properties of nc-Si:H thin films were analyzed at different substrate temperature. The result indicate that nc-Si:H thin films have suitable crystalline fraction and grain size, a good uniformity , absorption capacity and conductivity at
substrate temperature of 250 ℃. Crystalline and grain size of the film is 57% and
,respective. The nc-Si:H p-i-n solar cells were fabricated and analyzed .The result indicate that Voc= , Jsc= , FF= , η=% when intrinsic layer thickness was 800 nm.
Keywords PECVD;nc-Si:H thin film; structure chara