文档介绍：H110 Electrochemical and Solid-State Letters, 14 ͑3͒ H110-H113 ͑2011͒
1099-0062/2010/14͑3͒/H110/4/$ © The Electrochemical Society
Enhanced Detection of Copper Impurity in Silicon Wafer by
Dynamic Secondary Ion Mass Spectrometry
S. F. Koh,a W. L. Lim,b and T. Y. Tou b,z
(M) Sdn. Bhd., 54200 Selangor, Malaysia
bFaculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Malaysia
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A method by continuous electron bombardment of high purity SiO2 on a silicon wafer enables CuI migration from the silicon bulk
to the near surface where measurements were simultaneously carried out by dynamic secondary ion mass spectrometry ͑D-SIMS͒
depth profile. Negative charges from the electron bombardment were retained in the SiO2 layer and generated electron wind force
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and electrostatic force that significantly influenced the migration of CuI to the surface region, where its density increased with the
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electron bombardment current density. The CuI drift velocity was estimated empirically in this experiment to reach cm s.
This method has enabled the detection of Cu by D-SIMS beyond its sensitivity limit.
© 2010 The Electrochemical Society. ͓DOI: All rights reserved.
Manuscript submitted May 28, 2010; revised manuscript received November 18, 2010. Published December 20, 2010.
The presence of transitio