文档介绍：Electrochemical and Solid-State Letters, 13 ͑11͒ D83-D86 ͑2010͒ D83
1099-0062/2010/13͑11͒/D83/4/$ © The Electrochemical Society
Seedless Copper Electrodeposition onto Tantalum Diffusion
Barrier by Two-Step Deposition Process
Sunjung Kim*,z
School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749, Korea
Copper was electrodeposited directly ontoa5nmthick physical vapor deposited tantalum ͑Ta͒ diffusion barrier layer in a
͑͒
copper–ammonium–citrate Cu–NH3–Cit bath. An anodic potential was applied to Ta in a saturated KOH solution to remove
native Ta oxide before seedless copper deposition on Ta. The dense growth of copper films with sufficient wetting and adhesion
on Ta was made possible by a two-step potentiostatic deposition at − V vs saturated calomel electrode ͑SCE͒ for
͑͒ 3−
Cu2 Cit 2OH ion reduction and then at − V vs SCE for cupric ion reduction.
© 2010 The Electrochemical Society. ͓DOI: All rights reserved.
Manuscript submitted February 2, 2010; revised manuscript received August 11, 2010. Published September 2, 2010.
Seedless copper electrodeposition directly onto the diffusion bar- tion was prepared in conjunction with an applied anodic potential to
rier has been developed to leave more space for copper filling in dissolve the native Ta2O5 existing on the Ta surface. The KOH
damascene fea