文档介绍：目录
摘要1
1实验3
2结果与讨论
3结论8
退火对ZnO/Cu/ZnO透明导电薄膜性能的影响
Effects of Annealing on Properties of ZnO/Cu/ZnO Transparent Conductive Film
李文英,钟建,张柯,汪元元,尹桂林,何丹农。
LiWen—ying1,ZHONG Jian2,ZHANG Ke2 WANG Yuan—yuan2,YIN Dan—nong1’2
(1上海交通大学材料科学与工程学院,上海200240; 2纳米技术及应用国家工程研究中心,上海200241) (1 School of Materials Science and Jiao Tong University,Shanghai 200240,China;2 National Engineering Research Center for Nanotechnology,Shanghai 200241,China)
摘要:室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外一可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系。结果表明:退火前后薄膜均具有ZnO(002)择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低。150。C下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,%,×10-4Q·cIn,×1021 cm 。
关键词:退火;ZnO;Cu;透明导电薄膜
中图分类号:TN304;0484 文献标识码:A 文章编号:1001—4381(2015)01—0044—05
Abstract:ZnO/Cu/ZnO transparent conductive thin film was prepared by ic sputtering deposi—tion at room relationships between post—annealing and the structure,morphology, electrical and optical properties of the multilayer film were investigated by X—ray diffraction(XRD), canning electron microscope(SEM)。Hall effect measurement sys—tem and UV—Vis results indicate that ZnO films have(002)preferential ori—entation before and after the increase of annealing temperature,the cry