文档介绍：河北工业大学硕士学位论文
蓝宝石衬底抛光速率的研究
摘要
蓝宝石因其具有良好的光学特性和机械特性,在微电子领域得到越来越广泛的作用,
作为重要的衬底材料,需要高质量衬底表面状态。因此,在保证优质表面质量同时必须提
高生产效率,降低生产成本。化学机械抛光技术可实现低成本、高速率的表面精密加工。
本文阐述了蓝宝石衬底的应用发展前景及加工中存在的问题,介绍了蓝宝石化学机械抛光
技术,分析了蓝宝石衬底化学机械抛光过程中 pH 值、压力、温度、流量、抛光布等参数
对去除速率的影响;根据蓝宝石是双性氧化物的特性,提出了采用“小流量快启动”的方
法迅速提高 CMP 温度,以加快化学作用,提高 CMP 去除速率;并得到了化学作用和机械作
用相匹配时(即高 pH 值、大流量或低 pH 值,小流量)可得到较高去除速率,但前者速率
高于后者的结论。
实验中采用了纳米级SiO2溶胶为磨料的碱性抛光液,使用强碱作为pH调节剂,并加入
了适当的表面活性剂及螯合剂等。实验得出碱性抛光液的pH值在 - 之间,工艺参
数采用:压力 、温度 45℃、转速 60 转/min,抛光布采用Rodel suba 600,在保
证表面质量的同时得到了最大去除速率 nm/min。
关键词:蓝宝石衬底,化学机械抛光(CMP),去除速率,表面粗糙度
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蓝宝石衬底抛光速率的研究
INVESTIGATION OF THE SAPPHIRE SUBSTRATE
POLISHING RATE
ABSTRACT
Sapphire is ing more and more important in the Microelectronics area, because of the
bination of their optical and mechanical properties. As an important dielectric
substrate material, The generation of high-quality surfaces with fine surface is critical
importance. We must increase the productivity and reduce the production cost meanwhile ensure
the high surface quality. CMP can realize the surface of low-cost and high-rate. In the paper, the
foreground application of sapphire substrate ,the problems existed in the CMP technique was
summarized, CMP technology of sapphire substrate was introduced,the parameters that affect
the removal rate such as the pH、pressure、temperature、flow and polishing pad were
way“small flow fast start”to the rapidly rising CMP temperature was
suggested ,and the conclusion that the role of chemical and mechanical match(high pH,big flow
or low pH small flow) will get a highter rate of rmoval was obtained.
In the experiment,use the alkalescence polishing liquid that use the nanometer SiO2 as
abrasive,and use strong base KOH as regulator, meanwhile use surfactant and chelating agent It
is found that : Polishing liquid’s pH is between ,The process parameters: pressure