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器件制造与应用
Manufacturing and Application of Device

功率 MO SFET 并联驱动特性分析
钱敏, 徐鸣谦, 米智楠
(同济大学机械工程学院, 上海 201804) 1 1
摘要: 并联 MOSFET 非常适合于在低电压、大电流下工作。基于 IRFS4227PBF 功率 MOSFET ,
分析和测试了在一定散热环境下 MOSFET 结温的收敛特性与漏极电流的关系, 说明了 MOSFET 的
实际电流容量受散热条件制约, 并以此确定在额定电流下需要并联的个数。用 PSPICE 电路仿真
论述了外围电路 Q 值和功率管参数等因素对并联驱动的动态均流特性的影响。在此基础上搭建
实验平台, 成功实现了 8 个 MOSFET 并联在高频状态下的稳定工作。
关键词: MOSFET 并联; 安全工作区; 导热; 动态均流; PSPICE 仿真
中图分类号: TN386 1 文献标识码: A 文章编号: 1003 353X (2007) 11 0951 06
Analysis of Power MOSFET Performance in Parallel Operation
QIAN Min , XU Ming qian , MI Zhi nan
( Institute of Mechanical Engineering , Tongji University , Shanghai 201804 , China)
Abstract: Parallel MOSFET can be quite suitable for the low voltage and high current operating
circumstance. The relationship between junction temperature and drain current of MOSFET was analyzed and tested
using IRFS4227PBF. The result indicates that the practical rated drain current of MOSFET is restricted by the heat
dissipation conditions , by which the number of parallel MOSFET can be confirmed. With PSPICE circuit
simulation tools , the influences of Q value and MOSFET parameters on the transient current share performance
were discussed. Eight parallel MOSFETs were essfully driven to operate stably at high frequency.
Key words : parallel MOSFET; safe operating area ; heat conduction