文档介绍：Solar aspects of papers
LIGHT-INDUCED DEGRADATION AND THE ELECTRONIC PROPERIES OF NANOCRYSTALLINE SILICON SOLAR CELLS GROWN UNDER
FUNCTIONALLY GRADED HYDROGEN DILUTIONS
. Hugger and . Cohen
University of Oregon, 1371 E. 13th Avenue, Eugene, OR, 97403
Guozhen Yue, Gautam Ganguly, Baojie Yan, Jeffrey Yang, Subhendu Guha
United Solar Ovonic Corporation, 1100 W. Maple Road, Troy, MI, 48084
ABSTRACT
The electronic properties of hydrogenated nanocrystalline silicon (nc-Si:H) were studied using drive-level capacitance profiling (DLCP) to obtain defect density profiles as well as transient photocapacitace (TPC) and transient photocurrent (TPI) spectroscopies to study the spectra of defect related optical transitions. These measurements were performed on a series of n-i-p solar cell devices with intrinsic layer thickness of roughly 1-micron. The nc-Si:H intrinsic layers were deposited using RF or MVHF glow discharge with various hydrogen dilution profiles predominantly on specular stainless steel substrates (SS/n+/i nc-Si:H/p+/ITO), but also on textured back reflectors (SS/Ag/ZnO/n+/i nc-Si:H/p+/ITO) in some cases. Crystallite fractions were estimated using Raman spectroscopy. The electronic properties determined by our measurements could be correlated with variations in structural device parameters and with the degree of hydrogen dilution profiling during growth. We also