半导体导论翻译.doc

文档介绍：CHAPTER3TheSemiconductorinEquilibrium(d)T=400K,Nd=0,Na=1014cm-3(e)T=500K,Nd=1014cm-3,Na=,germanium,andgalliumarsenideeachhavedopantconcentrationsofNd=1X1013cm-3andNa=-3atT=(a)Isthismaterialntypeorptype?(b)=-3andwitharsenicataconcentrationof8X1014cm-3.(a)Isthematerialntypeorptype?(b)heelectronandholeconcentrations.(c)=300Kisp0=2x1015cm--?=200K,wehaveexperimentallydeterminedthatn0=5p0andthatNa=,p0,=1014cm-3andNa=0Calcu1atethemajority-carrierconcentrationat(a)T=300K,(b)T=350K,(C)T=400K(d)T=450K,and(e)T==0andNa=1014cm--carrierconcentrationversustemperatureovertherange200≤T≤=eptordopingconcentrationisNa=-carrierconcentration(onalog-logplot)versusNdovertherange1015≤Nd≤1018cm-=2x1013cm-3,Na=0,arrierconcentrationisni=2x1013cm--equilibriummajority-andminority