文档介绍：AbstractRecently,studyofsemiconductor-oresistance(MR)devicehasattractedmuchattention,becauseofthesemiconductor-,wemainlystudiedtheMReffectofnon-icsingle-,theeffectofdiodeonsilicon---assistedsilicon-oresistance(MR)%,whichincreasednearly76%-icfieldshowedtheinterfacecontactresistancewasincreasedremarkablywiththeinsertofsiliconoxide,,wehavemanufacturedadiode-assistedInP--dopedInPdeviceswithaassistantdiodebynonlocalfour-,,alargeMReffectinthedevicehasreachedwith1960%,wehasfoundthattherelationoftheMRenhancementeffectonthelength/: Silicon IndiumPhosphide icResistance Diode目 录引 言....................................................................................................................................................................................................................................