文档介绍：SiC薄膜的制备及性能研究
指导老师:
学生姓名:
专业班级: 材料工程
摘要
碳化硅被誉为下一代半导体材料,因为其具有众多优异的物理化学特性,被广泛应用于光电器件、高频大功率、高温电子器件。本文阐述了SiC研究进展及应用前景,从光学性质、电学性质、热稳定性、化学性质、硬度和耐磨性、掺杂物六个方面介绍了SiC的性能。SiC有高的硬度与热稳定性,稳定的结构,大的禁带宽度,高的热导率,优异的电学性能。同时介绍了SiC的制备方法:物理气相沉积法和化学气相沉积法,以及SiC薄膜表征手段。包括X射线衍射谱、傅里叶红外光谱、拉曼光谱、X射线光电子能谱等。最后讲了SiC的光学性能和电学性能以及参杂SiC薄膜的光学性能研究进展。
关键词:SiC,溅射,掺杂,性能研究
Study On The Synthesis And Properties Of SiC Film
Class : Material Engineering
Name : Hengyi Wang
Instructor : Yuxiang Li
Abstract
Silicon carbide is known as next-generation semiconductor materials, because it has many excellent physical and chemical characteristics, widely applied light electric parts, high frequency power, high temperature electronic devices. This paper expounds the research progress and application prospects of foundation, from optical properties, electrical properties, thermal stability, chemical properties, hardness and abrasion resistance, doping thing six aspects introduces the performance of has high hardness and thermal stability, stable structure, large forbidden band width, high thermal conductivity, excellent electrical properties. Meanwhile introduces the preparation methods of SiC: the physical vapor deposition and chemical vapor deposition, and SiC film characterization methods. Including X-ray diffraction spectrum, Fourier infrared spectra, Raman spectra, X-ray photoelectron spectroscopy (XPS). Finally spoke SiC optical performance and electrical properties and joined SiC film optica
l properties research progress.
Keywords: SiC, Spurting, Mingle, Performance study
目录
1 绪论…………………………………………………………………5
引言……………………………………………………………5
SiC材料的研究进展…………………………………………6
SiC的晶体结构、特性及应用前景…………………………7
SiC的晶体结构………………………………………7
SiC的物理和化学性质………………………………9
SiC的应用前景………………………………………11
SiC的掺杂……………………………………………………12
2 SiC薄膜的制备方法………………………………………………14
物理气象沉积法……………………………………………14
溅射…………………………………………………14
分子束外延…………………………………………16
离子注入合成法……………………