文档介绍：
Van der Pol Oscillator Based on Memristor#
SUN Huajun, SHA Peng, YAN Peng, MIAO Xiangshui*
(Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China & School of Optical and
5
10
Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China)
Abstract: The memristor electrically characterized by quasi-static DC and AC sinusoidal methods. In
all cases, it demonstrated excellent nonlinear-resistor behavior. So we proposed a new type of Van der
Pol oscillator based on the memristor. Its mechanism and oscillate conditions have been analyzed
systematically according to Hopf bifurcation theory. Furthermore, circuit experiment confirmed the
Van der Pol oscillator based on memristor is feasible.
Key words:
Memristor, Hopf bifurcation, Van der Pol oscillator, GeTe
0 Introduction
As is known to all, there are four ic quantities such as charge, current, voltage
and ic flux, and there must be six kinds of relationships between the four quantities
15
20
25
30
35
according to the permutation bination theory. But a link between charge and ic
flux was missing () while the other five kinds of relationships were familiar to all. Until May
1,2008, the Hewlett-Packard(HP) lab published a paper in Nature[1] to announce that they have
fabricated the first physical model of memristor that has drawn a tremendously increased intere