文档介绍：.,2013文章编号:(2013)00-0469-05喷淋头高度对InGaN/GaN量子阱生长的影响柯昀洁,梁红伟,申人升,宋世巍,夏晓川,柳阳,张克雄,杜国同(,辽宁大连116024;。吉林长春130012)摘要:在Aixtmn3×,制备了7,13,18,25mln间距的4个InGaN/GaN量子阱样品。利用原子力显微镜(AFM)、X射线衍射(XRD)对样品表面形貌及界面质量进行了表征。研究表明:随着高度的增加,量子阱的表面粗糙度减少,垒/阱界面陡峭度逐步变差,垒层和阱层厚度及阱层In组分含量减少;增加高度至一定值后,量子阱厚度及In组分趋于稳定。此外,对比垒层和阱层的厚度变化,垒层厚度的变化幅度较阱层更为明显。关键词:MOCVD;高度调节;InGaN/GaN量子阱中图分类号::ADOI:/GaNMQWsKEYun-jie,LIANGHong—weiH,,SONGShi—wei,XIAXiao—chuan,LIUYang。ZHANGKe—xiong,,(,DalianUniversityofTechnology,Dalian116024,China;,CollegeofElectronicsScienceandEngineering,JilinUniversity,Changchun130012,China)—mail:******@:AseriesofInGaN/GaNmulti-quantumwells(MQWs)samplesweregrownwithfourdif-ferentshowerheadgappositionusingAixtron3×2close-,theshowerheadgappositionof7,13,18and25mmwereselectedtostudytheeffectofgappositiononthegrowthofInGaN/,interfacequalityofsampleswerecharacterizedbyatomicforcemicroscopy(AFM)andX-raydiffraction(XRD).TheresultsshowthattheroughnessofMQWsdecreasedandtheinterfac