文档介绍：上海交通大学
硕士学位论文
S波段单片低噪声放大器与功率放大器设计
姓名:丁大峰
申请学位级别:硕士
专业:软件工程
指导教师:周健军;莫亭亭
20080520
S 波段单片低噪声放大器与功率放大器设计

摘要

本文阐述了低噪声放大器以及功率放大器的设计与应用。在现代通
信系统中,低噪声放大器及功率放大器分别是接收链路前端与发射链路
末端的关键组件。这两个器件性能的优劣直接影响到通信系统的整体性
能的高低。
本文所设计的产品属于微波单片集成电路范畴,集中阐述了 S 波段,
频率下使用砷化钾赝配高电子迁移率晶体管(PHEMT)工艺设
计放大器(包括低噪声放大器以及功率放大器)的方法,设计思路,注
意事项等等,为设计者提供有用的设计参考。本文设计的低噪声放大器
与功率放大器主要用于无线局域网(Wireless Local work)以及
工业科学医疗频段(Industrial Scientific Medical)应用。
低噪声放大器实现了频率下的噪声系数, 的
增益。功率放大器实现了 21dBm 的输出功率以及 43%以上的功率附加
效率。

关键词:微波单片集成电路,低噪声放大器,功率放大器,S 波段
S BAND MONOLITHIC LOW NOISE AMPLIFIER
AND POWER AMPLIFIER DESIGN

ABSTRACT

This thesis presents the design and implementation of S-band low noise
amplifier and power amplifier. In the munication system, low
noise amplifier and power amplifier are the ponents at the receiving
and transmitting front end respectively, their specifications directly
determine the performance of munication system.

The designs in this thesis belong to MMIC (Monolithic Microwave
Integrated Circuit) category, focused on (S band) GaAs, PHEMT
amplifier design method, procedure and design notice. The designs in this
thesis show excellent performance for WLNA(Wireless local work)
and ISM(Industrial scientific medical)applications.

The LNA achieves a noise figure together with gain, the
PA achieve delivers 21dBm output power and above 43% power added
efficiency.

KEY WORDS: MMIC,LNA,PA,S band
图片目录

图 1 基本的有源器件类型························································································· 4
图 2 GaAs HBT 截面图······························································································ 6
图 3 GaAs MESFET 截面图················