文档介绍：Highly Dense Microwave and Millimeter-
Wave Phased Array T/R Modules and Butler
Matrices Using CMOS and SiGe RFICs
Gabriel M. Rebeiz (1), Kwang Jin Koh (2), Tiku Yu (3), Dongwoo Kang (1), Choul Young Kim (1)
Yusuf Atesal (1), Berke Cetinoneri (1), Sang Young Kim (1) and Donghyup Shin (1)
(1) University of California, San Diego, CA USA, ******@
(2) Corp. Irvine, CA kjinkoh@
(3) MediaTek, Inc. San Jose, CA tikuyu@
Abstract— We have used silicon technologies to build to be assembled in the phased array but also greatly
highly dense phased array for X to W-band applications. simplifies the control routing in large arrays. The best
Typical designs include an 8-element 8-16 GHz SiGe phased array will therefore use III-ponents for low-
phased array receiver, a 16-element 30-50 GHz SiGe noise amplification and power generation together with
transmit phased array, a miniature (< 3mm2) and low silicon RFICs for the back-end functions (phase and gain
power (<100 mW) CMOS phased array receiver at 24 GHz, control, bining, digital processing, etc.).
and a 4-element SiGe/CMOS Tx/Rx phased array at 34-38
GHz with 5-bit amplitude and phase control, a 2-antenna 4- 2. 6-18 GHZ 8-ELEMENT PHASED ARRAY
simultaneous beam phased array chip at 15 GHz. Also, a
miniature 8x8 Butler Matrix with < 3 dB loss in um RECEIVER CHIP
CMOS h