文档介绍：??????????GaN 基LED 芯片的制作?????????????????????????????????????????分类号 TN312 学校代码10590UDC密 级 公开 GaN?LED?????I ?????????????????????????????????????????????????????????????????Ч??????????????????????????????????????????????????????????Е???????????????????????????????????????????????????????????????????????????М??????????????????????????????????Ч????????????????????????????Ч?????????????????????????????????????????????????????????????????С???????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????б??????????????·??????????????С?????????э????????????????????????????????????э??????????????????????????????????????????????????????????????????????????????????????????????????????GaN??LED????????????????????nm????????????????????????mW?IF??? mA?????????????μA?VR??v??????????????б??????????????????????Chip fabrication of GaN LED II AbstractGaN has been extensively investigated for electronic and optoelectronic application, especially for GaN light emitting diodes (LED). Recently, tremendous progress has been achieved in GaN-based blue and green LED, which has many attractive characteristics such as savings in energy consumption, environmental protection, little cubage, short response time, high efficiency, long lifetime, explosion resist, easy to match with the IC circuit etc. It also can be used under any bad circumstance. So, it can be used in the fields of large color display, traffic lights, LCDs, light source, munication and so on. Whit light LED used to illuminate has been paid on great attention by every country. Japan, United States of America, Europe Union and China all have proposed the projects about white LED illumination. In this paper, we focus great attention on investigating the fabrication of p-type ohmic contact on GaN. We also research the technology for making the ITO which is used as the material of p electrode. Following are the conclusions. (1) Using the Ni/Au as t