文档介绍：
液封直拉磷化铟单晶的湿法腐蚀研究#
杨瑞霞1,陈爱华1,杨帆1,孙聂枫2,李晓岚2*
(1. 河北工业大学信息工程学院,天津,300401;
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2. 中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄 050051)
摘要:采用原位磷注入合成法在富磷熔体中生长磷化铟(InP)单晶体材料,用两种腐蚀试剂对
掺 S 和掺 Fe 的单晶片进行研究,用自主配制的 CH (CrO3/HBr)腐蚀液对(111)In 面 InP 晶片
进行腐蚀,取得了较好的效果。经过多次实验确定了(100)、(111)P 面 InP AB 腐蚀和 InP (111)In
面 CH 腐蚀的最佳腐蚀条件,清晰地观察到了 InP 单晶中存在的线状蚀坑、环状蚀坑、位错
排和小角晶界等缺陷形貌,并对各种类型缺陷的形成机理进行了分析。
关键词:微电子学与固体电子学;InP;湿法腐蚀
中图分类号:
Micro-defect of LEC InP by Wet Etching Process
YANG Ruixia1, CHEN Aihua1, YANG Fan1, Sun Niefeng2, Li Xiaolan2
(1. School of Information Engineering, Hebei University of Technology, Tianjin 300401;
2. National Key Laboratory of ASIC ,The 13th Research Institute, CETC,)
Abstract: Doped InP single crystals were grown in phosphorus-rich melt by in-situ phosphorous
injection synthesis liquid encapsulated Czochraski (LEC) method. S-doped and Fe-doped InP
wafer were studied by two kinds of etchants. (111) In InP wafer was etched by self-prepared CH
(CrO3/HBr) etchant, And achieved good results. The best etching conditions for AB etchant and
CH etchant were obtained by numbers of experiment. Kinds of microdefect were observed after
etching, And formation mechanism of some types of defect was analyzed.
Key words: Microelectronics and solid-state electronics; InP; Wet Etching
0 引言
我国稀散金属铟的储量居世界第一,铟的重要化合物 InP 具有抗辐射能力强、光电转换
效率高、热导率高等优良的性能,以掺